2SK4125 no. a0747-1/7 1 : gate 2 : drain 3 : source sanyo : to-3p-3l 15.6 1.5 0.6 2.0 1.0 123 18.4 10.0 16.76 5.45 5.45 3.2 7.0 3.5 5.0 19.9 20.0 3.0 4.8 13.6 1.4 features ? on-resistance r ds (on)=0.47 (typ.) ? input capacitance ciss=1200pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i d 17 a drain current (pulse) i dp pw 10 s, duty cycle 1% 52 a allowable power dissipation p d 2.5 w tc=25 c (sanyo?s ideal heat dissipation condition)*1 170 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *2 e as 78.8 mj avalanche current *3 i av 17 a * 1 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 2 v dd =50v, l=500 h, i av =17a (fig.1) * 3 l 500 h, single pulse package dimensions unit : mm (typ) 7539-002 62012 tkim/d0507 tiim tc-00001053/51607qb tiim tc-00000701 sanyo semiconductors data sheet 2SK4125 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena0747b product & package information ? package : to-3p-3l ? jeita, jedec : sc-65, to-247, sot-199 ? minimum packing quantity : 30 pcs./magazine marking electrical connection k4125 lot no. 1 3 2 2SK4125-1e
2SK4125 no. a0747-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds =480v, v gs =0v 100 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance | yfs | v ds =10v, i d =8.5a 4.5 9 s static drain-to-source on-state resistance r ds (on) i d =7a, v gs =10v 0.47 0.61 input capacitance ciss v ds =30v, f=1mhz 1200 pf output capacitance coss 220 pf reverse transfer capacitance crss 50 pf turn-on delay time t d (on) see fig.2 26.5 ns rise time t r 82 ns turn-off delay time t d (off) 145 ns fall time t f 52 ns total gate charge qg v ds =200v, v gs =10v, i d =17a 46 nc gate-to-source charge qgs 8.3 nc gate-to-drain ?miller? charge qgd 26.7 nc diode forward voltage v sd i s =17a, v gs =0v 1.0 1.3 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK4125-1e to-3p-3l 30pcs./magazine pb free 50 50 rg v dd l 2SK4125 10v 0v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it11753 it11754 0 0 30 35 25 20 15 10 30 525 15 20 10 5 0 40 30 35 25 20 15 10 5 020 18 16 412 210 68 14 15v tc=25 c v ds =20v v gs =5v 6v tc= --25 c 25 c 75 c 8v 10v pw=10 s p. g r gs =50 g s d i d =8.5a r l =23.5 v dd =200v v out 2SK4125 v in 10v 0v v in d.c. 0.5%
2SK4125 no. a0747-3/7 static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it11755 it11756 --50 --25 0 25 50 75 100 125 150 0 1.4 0.4 1.0 0.6 0.2 1.2 0.8 it11758 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 it11757 25 c --25 c tc=75 c 0.1 23 57 23 1.0 23 5 5 7 10 1.0 10 2 3 5 7 5 7 3 2 3 v ds =10v tc= --25 c 75 c v gs =0v 3 0 2.0 1.8 1.0 1.4 15 13 59 711 0.6 0.2 1.2 1.6 0.8 0.4 i d =7a tc=75 c 25 c --25 c i d =7a, v gs =10v sw time -- i d it11759 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 5 23 5 72 10 357 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 5253545 15 10 30 40 20 it11760 f=1mhz ciss coss crss 25 c drain-to-source voltage, v ds -- v drain current, i d -- a a s o total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg it12416 0 0 1 2 3 4 5 6 7 8 50 40 10 9 10 20 30 v ds =200v i d =17a it16834 0.01 0.1 1.0 10 s 100 s 100ms 10ms 1ms dc operation 0.1 1.0 10 100 23 57 23 57 23 57 23 57 1000 10 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 100 operation in this area is limited by r ds (on). i dp =52a(pw 10 s) i d =17a tc=25 c single pulse
2SK4125 no. a0747-4/7 0 0 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 it12240 0 0 20 40 60 80 100 140 120 100 80 120 140 160 170 180 60 40 20 200 160 it12241 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c
2SK4125 no. a0747-5/7 magazine speci cation 2SK4125-1e
2SK4125 no. a0747-6/7 outline drawing 2SK4125-1e mass (g) unit 1.8 * for reference mm
2SK4125 no. a0747-7/7 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2SK4125 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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